aot14n50fd/AOTF14N50FD 500v, 14a n-channel mosfet general description product summary v ds i d (at v gs =10v) 14a r ds(on) (at v gs =10v) < 0.47 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot14n50fdl & AOTF14N50FDl symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 0.4 c 50 9.6* avalanche current c 375 single pulsed avalanche energy g 750 5 repetitive avalanche energy c v 30 gate-source voltage t c =100c a 56 pulsed drain current c continuous drain current t c =25c i d maximum junction-to-ambient a,d the aot14n50fd/AOTF14N50FD have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 600v@150 drain-source voltage 500 maximum junction-to-case mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 278 c/w 5 junction and storage temperature range a w w/ o c 65 65 mj v/ns c units 0.45 2.5 AOTF14N50FD aot14n50fd AOTF14N50FD 14 14* 9.6 2.2 aot14n50fd maximum case-to-sink a 0.5 -- c/w g ds top view to-220f to-220 g d s g d s AOTF14N50FD aot14n50fd rev3: jul 2011 www.aosmd.com page 1 of 6
aot14n50fd/AOTF14N50FD symbol min typ max units 500 600 bv dss / ? tj 0.57 v/ o c 10 100 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 2.4 3 4 v r ds(on) 0.37 0.47 w g fs 15 s v sd 1.3 1.6 v i s maximum body-diode continuous current 14 a i sm 56 a c iss 1300 1654 2010 pf c oss 120 179 235 pf c rss 8 14.5 21 pf r g 1.7 3.4 5.1 w q g 30 38.8 47 nc q gs 8.7 nc q gd 17.5 nc t d(on) 32 ns t r 94 ns t d(off) 104 ns t f 78 ns t rr 90 145 ns q rr 0.3 0.5 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge diode forward voltage zero gate voltage drain current v ds =500v, v gs =0v output capacitance v ds =5v, i d =250 m a v ds =400v, t j =125c i d =10ma, v gs =0v, t j =25c i d =10ma, v gs =0v, t j =150c m a body diode reverse recovery charge i f =14a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance v ds =0v, v gs =30v gate source charge turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =250v, i d =14a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =400v, i d =14a zero gate voltage drain current i d =10ma, vgs=0v i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss v drain-source breakdown voltage body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =7a reverse transfer capacitance i f =14a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =14a,v gs =0v v ds =40v, i d =7a forward transconductance a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =5a, v dd =150v, r g =25 ? , starting t j =25c rev 3: jul 2011 www.aosmd.com page 2 of 6
aot14n50fd/AOTF14N50FD typical electrical and thermal characteristics 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.4 0.8 1.2 1.6 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) rev 3: jul 2011 www.aosmd.com page 3 of 6
aot14n50fd/AOTF14N50FD typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =400v i d =14a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for AOTF14N50FD (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 3 6 9 12 15 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) 1s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aot14n50fd (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s rev 3: jul 2011 www.aosmd.com page 4 of 6
aot14n50fd/AOTF14N50FD typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot14n50fd (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.45c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF14N50FD (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d -20 -15 -10 -5 0 5 10 15 -600 -300 0 300 600 900 1200 trr (ns) figure 14: diode recovery characteristics i f (a) v ds =100v i f =14a di/dt=100a/ m s aot(f)14n50fd aot(f)14n50 rev 3: jul 2011 www.aosmd.com page 5 of 6
aot14n50fd/AOTF14N50FD - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 3: jul 2011 www.aosmd.com page 6 of 6
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